unisonic technologies co., ltd 50n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-088.e 50 amps, 60 volts n-channel power mosfet ? description the utc 50n06 is three-terminal silicon device with current conduction capability of about 50a, fast switching speed. low on-state resistance, breakdown voltage rating of 60v, and max threshold voltages of 4 volt. it is mainly suitable electronic ballast, and low power switching mode power appliances. ? features * r ds(on) = 23m ? @ v gs = 10 v * ultra low gate charge ( typical 30 nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * 100% avalanche energy specified * improved dv/dt capability ? symbol 1.gate 3.source 2.drain to-220 1 1 to-220f to-252 to-251 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 50n06l-ta3-t 50N06G-TA3-T to-220 g d s tube 50n06l-tf3-t 50n06g-tf3-t to-220f g d s tube 50n60l-tm3-t 50n60g-tm3-t to-251 g d s tube 50n06l-tn3-r 50n06g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source (1) r: tape reel, t: tube (2) ta3: to-220, tf3: to-220f, tn3: to-252, tm3: to-251 (3) g: halogen free, l: lead free 50n06l -ta3 -t (1)packing type (2)package type (3)lead plating
50n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-088.e ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v t c = 25c 50 a continuous drain current t c = 100c i d 35 a pulsed drain current (note 2) i dm 200 a single pulsed (note 3) e as 480 mj avalanche energy repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 7 v/ns to-220 120 w to-220f 70 w to-251 136 w power dissipation (t c =25c) to-252 p d 136 w junction temperature t j +150 c operation and stor age temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limited by t j 3. l=0.38mh, i as =50a, v dd =25v, r g =20 ? , starting t j =25c 4. i sd 50a, di/dt 300a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol rating unit to-220 62 c/w to-220f 62 c/w to-251 100 c/w junction to ambient to-252 ja 100 c/w to-220 1.24 c/w to-220f 1.78 c/w to-251 1.1 c/w junction to case to-252 jc 1.1 c/w ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 10 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 250 a, referenced to 25c 0.07 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 25 a 18 23 m ? dynamic characteristics input capacitance c iss 900 1220 pf output capacitance c oss 430 550 pf reverse transfer capacitance c rss v gs = 0 v, v ds = 25 v f = 1mhz 80 100 pf
50n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-088.e ? electrical characteristics(cont.) switching characteristics turn-on delay time t d(on) 40 60 ns turn-on rise time t r 100 200 ns turn-off delay time t d(off) 90 180 ns turn-off fall time t f v dd = 30v, i d =25 a, r g = 50 ? (note 1, 2) 80 160 ns total gate charge q g 30 40 nc gate-source charge q gs 9.6 nc gate-drain charge q gd v ds = 48v, v gs = 10 v i d = 50a (note 1, 2) 10 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd i s = 50a, v gs = 0 v 1.5 v maximum continuous drain-source diode forward current i s 50 a maximum pulsed drain-source diode forward current i sm 200 a reverse recovery time t rr 54 ns reverse recovery charge q rr i s = 50a, v gs = 0 v di f / dt = 100 a/ s 81 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
50n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-088.e ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
50n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-088.e ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r g 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
50n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-088.e ? typical characteristics drain current, i d (a) drain current, i d (a) 0.0 0 drain current, i d (a) 40 80 200 100 140 0.5 1.0 1.5 2.0 2.5 on-resistance variation vs. drain current and gate voltage 10 2 10 1 10 0 0.2 source-drain voltage, v sd (v) on state current vs. allowable case temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 160180 v gs =20v *note: 1. v gs =0v 2. 250s test 25c 150c v gs =10v
50n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-088.e ? typical characteristics(cont.) -100 drain-source breakdown voltage, bv dss (normalized) junction temperature, t j (c) -50 50 200 *note: 1. v gs =0v 2. i d =250a 100 150 1.2 breakdown voltage variation vs. junction temperature 0 1.1 1.0 0.9 0.8 drain-source on-resistance, r ds(on) , (normalized) -50 50 100 150 3.0 on-resistance variation vs. junction temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 junction temperature, t j (c) *note: 1. v gs =10v 2. i d =25a 10 1 10 0 10 -1 drain-source voltage, v ds (v) drain current , i d, (a) maximum safe operating 10 -1 10 3 drain current, i d (a) case temperature, t c (c) 75 100 150 50 maximum drain current vs. case temperature 0 125 50 25 10 20 30 40 10 0 10 1 10 2 operation in this area by r ds (on) *note: 1. t c =25c 2. t j =150c 3. single pulse 100s 1ms 10ms 10ms 10 2 thermal response, z jc (t)
50n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-088.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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